"Additive Manufacturing of Microelectronics Including Passive and Active Components for 3D HI and Advanced Packaging"
You are cordially invited to attend SMTA Boston chapter//iMAPS NE/IEEE Boston Reliability joint evening meeting at Kostas Research Institute (KRI) on the Northeastern University Innovation Campus.
Topic: "Additive Manufacturing of Microelectronics Including Passive and Active Components for 3D HI and Advanced Packaging"
Presented by: Prof. Ahmed Busnaina, Ph.D. of Northeastern University
Date: Wednesday, Feb. 11, 2026
Time: 5:00 PM
Location: Kostas Research Institute (KRI) on the Northeastern University Innovation Campus
Dinner Cost: Free, but Pre-Registration is Required
Limit of 40 Attendees. Register for your spot NOW!
A new high-throughput additive manufacturing of nano and microelectronics utilizes direct assembly of nanoscale particles onto interposers, wafers, or boards. The technology enables the printing of inorganic conductors, semiconductors and dielectrics. It has been demonstrated for printing passive and active components including logic gates at the nano and microscale. Transistors with an on/off ratio greater than
10 6 have been demonstrated. This technology enables the fabrication of nanoelectronics and electronic components while reducing the cost by 10 to 100 times compared to conventional fabrication and can print 1000 times faster than ink-jet-based printing. Results show high-throughput printing of interconnects and circuit components at a scale equal to or less than 2 microns. Fully additively manufactured
capacitors printed on silicon, sapphire, and polymer substrates will be presented. The results will show printed capacitors ranging down to 20 x 20 µm with capacitance of femto farads to nano farads. The results will also show additively printed MOSFET and logic gates such as NAND with high on/off ratios. A fully automated printing platform (a Fab-in-a-Box) was designed and built for printing microelectronics with
minimum-sized features down to 300 nm for several advanced packaging applications and will be presented.
Date and Time
Location
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- Northeastern University Innovation Campus
- 141 South Bedford Street
- Burlington, Massachusetts
- United States
- Building: Kostas Research Institute (KRI)
- Starts 28 January 2026 08:00 PM UTC
- Ends 11 February 2026 10:00 PM UTC
- No Admission Charge
Speakers
Ahmed A. Busnaina, Ph.D.
"Additive Manufacturing of Microelectronics Including Passive and Active Components for 3D HI and Advanced Packaging"
Biography:
Ahmed A. Busnaina, Ph.D., is the founding Director of the National Science Foundation’s Nanoscale Science and Engineering Center for High-rate Nanomanufacturing since 2004 and the NSF Center for Microcontamination Control at Northeastern University, Boston, MA, since 2002. He is also the founder and CTO of Nano OPS, Inc. since 2017.
Prior to joining Northeastern University, he was a professor and a director of the Particulate Control Lab at Clarkson University from 1984-2000.
Dr. Busnaina is internationally recognized for his work on semiconductor fabrication with an emphasis on yield. He also developed nano and microscale additive manufacturing for making interconnects, passive and active electronic components, LEDs, and sensors. He authored more than 600 papers in journals, proceedings, and conferences. He also has 25 granted and more than 45 pending patents. He was awarded the 2020 American Society of Mechanical Engineers (ASME) William T. Ennor Manufacturing Technology Award and Medal. He is a fellow of the National Academy of Inventors, a fellow of the American Society of Mechanical Engineers, and a Fulbright Senior Scholar. He is an editor of the Journal of Microelectronic Engineering. He also serves on many advisory boards, including Samsung Electronics, the Journal of Electronic Materials Letters, the Journal of Nanomaterials, and the Journal of Nanomanufacturing.
Agenda
Agenda:
5:00 PM - 6:00 PM - Registration and Networking
5:30 PM - 6:00 PM - Dinner
6:00 PM - 7:00 PM - Feature Technical Presentation
7:00 PM - Tour & Networking
8:30 PM - Adjourn