The new era of power efficient devices by utilizing wide bandgap technology - opportunities and challenges
EDS Distinguished Lecture by Professor Mikael Östling, KTH Royal Institute of Technology, Sweden
The rapid electrification of our society is in full swing. The need for better energy efficiency is urgent. The progress in the development of emerging new device technologies is very promising. Semiconductor materials with wide bandgap are maturing fast. Both gallium nitride (GaN) and silicon carbide (SiC) devices are today to be found in several commercial applications such as power supplies for computers and charging equipment for handheld units. High power applications are also rolling out for automotive industry and EV charging networks. Many hundreds of TWh will be saved. Yet, much more development is needed and expected. The material quality is far from perfect, but promising. This talk will focus on the current status and projections on high voltage SiC and GaN device technology for the electrical infrastructure and promising high temperature applications. A brief presentation regarding the activities for the EU Chips JU Pilot Line 4 will be included.
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- P.za S. Basilio, 3
- L’Aquila, Abruzzi
- Italy 67100
- Building: Centro Congressi Luigi Zordan
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Mikael
The new era of power efficient devices by utilizing wide bandgap technology - opportunities and challenges
Biography:
Professor Mikael Östling received his MSc and the PhD degrees from Uppsala University, Sweden. He holds a position as professor in solid state electronics at KTH, Royal Institute of Technology in Stockholm, Sweden. He was the deputy president of KTH 2017-2022. He previously held the position as dean of the School of Information and Communication Technology, KTH, and head of department. Mikael was a senior visiting Fulbright Scholar at Stanford University, and a visiting professor with the University of Florida, Gainesville. Mikael was an editor of the IEEE Electron Device Letters and EiC of IEEE J-EDS. He is a Life Fellow of the IEEE and Fellow of the Electrochemical Society.