IEEE EDS Webinar: Robustness and Reliability of Wide Bandgap Power Semiconductors
Webinar EDS SCV/SF event, Topic: "Robustness and Reliability of Wide Bandgap Power Semiconductors", Presenter: Dr. Layi Alatise
"Robustness and Reliability of Wide Bandgap Power Semiconductors" Lecture by Dr. Layi Alatise
The Electron Devices Society Santa Clara Valley/San Francisco joint Chapter and Device Reliability Physics committee are hosting Dr. Layi Alatise
When: Friday, April 24th, 2026 – 11:45AM to 1:15PM (PDT)
11:45AM - 12PM: Introduction
12PM-12:45PM: Lecture
12:45PM-12:55PM: Q&A
1PM Adjourn
Where: Zoom
Zoom
This is an online event ONLY and attendees can participate via Zoom.
We will send the Zoom meeting information to registrants one day before the meeting. Please make sure you register.
Contact: ieeescveds at gmail.com
Speaker: Dr. Layi Alatise
Abstract:
Wide bandgap devices are increasingly penetrating the automotive market and are becoming prime candidates for implementation in applications like traction inverters and battery chargers. The mission profile of the traction inverter is a particularly aggressive one since the electrothermal stresses on the power devices vary significantly in amplitude and frequency as the motor drive goes through various stages of the drive cycle including acceleration, deceleration, stalling etc. Historically, the traction converter has been implemented using silicon devices where the performance and reliability is well known and understood. Application of WBG devices like SiC MOSFETs and GaN power devices in automotive applications requires understanding of the reliability and qualification procedures especially according to the automotive standard. SiC and GaN power devices have varying internal physics and modes of operation with vastly varying robustness and reliability performance compared to silicon devices. Given the sensitive nature of the application, these devices must pass stringent automotive reliability tests and guidelines defined by the Automotive Electronics Council (AEC), the Joint Electron Device Engineering Council (JEDEC-JC70) and the European Centre of power electronics (AQG).
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IEEE EDS Webinar: Robustness and Reliability of Wide Bandgap Power Semiconductors
Biography:
Layi ALATISE is currently a Professor and Royal Society Industry Fellow in Power Electronics at the University of Warwick. He received the B.Eng. (first class Hons.) degree in electrical/electronic engineering and the Ph.D. degree in microelectronics and semiconductors from Newcastle University, Newcastle upon Tyne, U.K., in 2005 and 2008, respectively. In June 2008, he joined the Innovation R&D Department, NXP Semiconductors, as Development Engineer where he designed, processed, and qualified discrete power trench MOSFETs for automotive applications and switched-mode power supplies. In November 2010, he joined the University of Warwick as Science City Research Fellow to investigate advanced power semiconductor materials and devices for improved energy conversion efficiency. Since February 2019, he has been a Professor in Electrical Engineering with the University of Warwick, Coventry, U.K. He has led several EPSRC projects in Power Electronics and is currently working on an UK government funded Project with a major automotive manufacturer for the development of automotive powertrains based on Silicon Carbide traction inverters. He was a recipient of the 2021 best paper award in the IEEE Transactions in Industrial Electronics. He has the authored or co-authored more than 100 publications in journals and international conferences. Prof. Alatise is a Chartered Engineer, Fellow of the IET and a Senior member of the IEEE.