A Multi-Physics Toolkit for Predictive Electromigration Modeling in Advanced IC Interconnections
As semiconductor technologies advance toward complex chiplet integration and extreme miniaturization, the reliability of integrated circuit (IC) interconnections has emerged as a primary bottleneck for system performance. High current densities in these scaled interconnects make electromigration (EM) a critical failure mechanism. However, traditional assessment methods, such as Black’s Equation, are increasingly inadequate; they lack the capability to localize void-nucleation sites or effectively couple the complex 3D multi-physics driving forces—specifically thermal and thermo-mechanical stress gradients—present in realistic structures.
This talk introduces an advanced simulation toolkit developed as an Ansys Customization Toolkit designed for the rapid and accurate assessment of interconnect reliability. By utilizing a dynamic Atomic Flux Divergence (AFD) formulation derived from the first principles of thermodynamics, the toolkit captures the spatial-temporal evolution of EM-induced degradation.
A key innovation of this toolkit is its integration of microscale defect dynamics and energy barriers—parameters often experimentally inaccessible—computed via Density-Functional Theory (DFT) and Finite-Element Analysis (FEA). This enables the modeling of synergistic effects between electron-wind, thermal gradients, and stress-migration in a full 3D environment. With such ab-initio modeling, strong correlation between estimated failure times and experimental data, achieving low error rates for Copper (0.37%) and Aluminum (0.27%) interconnects are observed. This toolkit can facilitate the evaluation of novel materials, barrier metals, and layouts before committing to resource-intensive back-end-of-line (BEOL) process development.
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- 广州市增城区朱村街朱村大道西78号
- guangzhou, Guangdong
- China 511370
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- Co-sponsored by IEEE EDS Guangzhou Chapeter
- Starts 30 April 2026 04:00 PM UTC
- Ends 10 June 2026 04:00 PM UTC
- No Admission Charge
Speakers
Cher Ming
A Multi-Physics Toolkit for Predictive Electromigration Modeling in Advanced IC Interconnections
As semiconductor technologies advance toward complex chiplet integration and extreme miniaturization, the reliability of integrated circuit (IC) interconnections has emerged as a primary bottleneck for system performance. High current densities in these scaled interconnects make electromigration (EM) a critical failure mechanism. However, traditional assessment methods, such as Black’s Equation, are increasingly inadequate; they lack the capability to localize void-nucleation sites or effectively couple the complex 3D multi-physics driving forces—specifically thermal and thermo-mechanical stress gradients—present in realistic structures.
This talk introduces an advanced simulation toolkit developed as an Ansys Customization Toolkit designed for the rapid and accurate assessment of interconnect reliability. By utilizing a dynamic Atomic Flux Divergence (AFD) formulation derived from the first principles of thermodynamics, the toolkit captures the spatial-temporal evolution of EM-induced degradation.
A key innovation of this toolkit is its integration of microscale defect dynamics and energy barriers—parameters often experimentally inaccessible—computed via Density-Functional Theory (DFT) and Finite-Element Analysis (FEA). This enables the modeling of synergistic effects between electron-wind, thermal gradients, and stress-migration in a full 3D environment. With such ab-initio modeling, strong correlation between estimated failure times and experimental data, achieving low error rates for Copper (0.37%) and Aluminum (0.27%) interconnects are observed. This toolkit can facilitate the evaluation of novel materials, barrier metals, and layouts before committing to resource-intensive back-end-of-line (BEOL) process development.
Biography:
Professor Tan is a Senior Member of IEEE and a Fellow of several prestigious institutions, including the Singapore Quality Institute, Institute of Engineers, Singapore and the International Association of Advanced Materials, Swedan. He is a contributor to international standards like IEEE 1624 and IEEE 1413. Since 2007, he has served as an IEEE EDS Distinguished Lecturer, delivering over 40 keynote addresses and providing systematic reliability training at major conferences such as IRPS, RAMS, and EDTM.
He has Published over 400 papers in high-impact journals and authored 14 books on reliability, with his work on Simulated Annealing exceeding 60,000 downloads. He is recognized among Stanford University’s Top 2% Scientists worldwide, specifically ranking in the top 0.043% for Semiconductor Reliability. He also provided expert consulting to more than 50 international organizations, including NASA, TSMC, Microsoft, the Taiwan Space Agency, and Aptiv.
Address:Taiwan