Technical Talk on Wide Bandgap Semiconductor-Based Power Electronics Systems in Electric Vehicles

#IEEE #IES # #industrial-electronics-society #electric-vehicles

Event Details: IEEE Industrial Electronics Society (IES) Chapter - Technical Talk on Wide Bandgap Semiconductor-Based Power Electronics Systems in Electric Vehicles by Dr. Naresh Kumar Pilli, Staff Application Engineer – Power, SEMTECH Corporation (USA), Hyderabad Center, on 25th July 2026 / 3:00 pm to 4:00 pm

Abstract: The rapid electrification of the transportation sector has intensified the demand for high-efficiency, high-power-density, and safety-critical power electronic systems in electric vehicles (EVs). Conventional silicon (Si) devices are approaching their fundamental material limits — constrained by low bandgap, high switching losses, and thermal ceilings around 175°C. Wide bandgap (WBG) semiconductors, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN), have emerged as transformative technologies, offering 3–4× wider bandgap, up to 20× higher breakdown field, and
superior thermal performance. This talk examines the role of WBG devices across EV traction inverters, onboard chargers, and DC-DC converters, alongside the 800V architecture revolution enabling 98% inverter efficiency
and sub-20-minute charging. Critical challenges are addressed — gate driving complexity, reliability trade-offs, and ISO 26262 functional safety requirements including torque control, thermal protection, and electric insulation — along with power electronic circuit-level design   mandates and future WBG trends.

Biography:

Dr. Naresh Kumar Pilli is a Staff Application Engineer (Power) at Semtech in Hyderabad, working on the design and modelling of power-management ICs. He holds a Ph.D. in Power Electronics from IIT (BHU) Varanasi and brings over five years of post-doctoral industry experience across gate-driver and traction-inverter development at Bosch, and high-power converter research at the University of Nottingham for Rolls-Royce aerospace. His interests span SiC/GaN power devices, gate-driver architectures, and automotive functional safety.

Registrations are limited. 

Registration Fees details:

For IEEE Participants - Nil

For Non-IEEE Participants who submit the registration form will receive a payment link/QR code by email. A confirmation email will be sent upon receipt of the ₹300 registration fee.

For Queries contact:
IEEE Members: Dr PV Rajgopal, IES Chapter Vice Chair, 9985306562
Non-IEEE Members: Dr. D. Hari Krishna, IES Chapter Secretary, 9490215195

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• BHEL/ Corporate R&D Unit
• Vikas Nagar (Near Balanagar)
• Hyderabad, Telengana
• India 500042

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