Distinguished Lecture "Silicon Carbide power semiconductors: device modelling, gate drivers and applications" hosted by PELS UK&Ireland Chapter
Title: Silicon Carbide power semiconductors: device modelling, gate drivers and applications
Abstract: Silicon Carbide (SiC) power semiconductors exhibit superior electrothermal characteristics compared to Silicon counterparts. Lower conduction and switching losses, higher operating temperatures and frequencies will impact the design and operation of power converters. Up to date, SiC MOSFETs are the most successful device technology.
The first part of this lecture will provide the fundamental design and operating principles of SiC MOSFETs, as well as their static and dynamic modelling by utilizing experimental data. To accelerate simulation times, a real-time hardware-in-the-loop dynamic model of high-voltage 3.3 kV SiC MOSFETs will be analyzed. The second part will focus on passive and active gate drivers for low- and high-voltage SiC MOSFETs, as well as on low-coupling capacitance and high-isolation voltage power supplies for energizing drive circuits. A particular focus will be placed on active and adaptive gate drivers that can shape switching and conducting operation of SiC MOSFETs for enhancing reliability. Finally, an overview of power electronics applications that can be benefited by employing SiC power semiconductors will be presented. Among others, applications such as e-mobility, renewables and energy storage will be discussed.
Date and Time
Location
Hosts
Registration
-
Add Event to Calendar
Loading virtual attendance info...
- Cardiff, Wales
- United Kingdom CF10 4JB
- Building: Queen's Buildings, 14-17 The Parade
- Room Number: N/4.07