IEEE PELS REGIONAL DISTINGUISHED LECTURE (RDL)
This Regional Distinguished Lecture will focus on the switching behaviour of Wide Bandgap (WBG) power devices, particularly Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) HEMTs, which are increasingly replacing conventional silicon devices in high-efficiency power converters. The session will discuss the challenges associated with their fast switching characteristics, including parasitic oscillations, electromagnetic interference (EMI), voltage overshoot, and switching losses. Prof. Kaushik Basu will present circuit-based analytical and digital twin models capable of predicting switching energy, transient overvoltage, switching speed, and other key parameters, enabling engineers to design reliable, high-performance power converters using WBG devices. The lecture will also highlight practical applications of these models in modern power electronics research and industry.
EVENT POSTER :
Date and Time
Location
Hosts
Registration
-
Add Event to Calendar
Loading virtual attendance info...
- Starts 30 July 2026 03:30 PM UTC
- Ends 05 August 2026 11:30 AM UTC
- No Admission Charge
Speakers
Dr. Kaushik Basu
Modelling the Switching Behaviour of Wide Bandgap (WBG) Power Devices
Modelling the Switching Behaviour of Wide Bandgap (WBG) Power Devices" focuses on understanding the dynamic switching characteristics of advanced power semiconductor devices such as Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) HEMTs. As these devices enable higher efficiency, faster switching, and increased power density compared to conventional silicon devices, accurately modelling their behaviour is essential for designing reliable power electronic converters. This topic explores the mechanisms behind switching transients, the impact of parasitic elements, electromagnetic interference (EMI), voltage overshoot, and switching losses, while introducing analytical and digital twin-based modelling techniques that help predict device performance and optimize converter design for modern high-efficiency power electronics applications.
Biography:
Dr. Kaushik Basu is an Associate Professor in the Department of Electrical Engineering at the Indian Institute of Science (IISc), Bengaluru, India. He serves as a Regional Distinguished Lecturer (RDL) for the IEEE Power Electronics Society (PELS), focusing on advanced power semiconductor devices and converter technologies.Professional BackgroundCurrent Role: Associate Professor, Department of Electrical Engineering, Indian Institute of Science (IISc), Bengaluru.Education: Ph.D. in Electrical Engineering from the University of Minnesota (2012); M.Sc. from IISc (2005); B.E. from Bengal Engineering and Science University (2003).Past Industry Experience: Design Engineer at Cold Watt India (2006) and Electronics and Control Engineer at Dynapower Corporation, USA (2013–2015).Roles: Founding Chair of the IEEE PELS and IES Bangalore Chapter; Associate Editor for IEEE Transactions on Power Electronics. Administrative Committee (AdCom) Member-at-Large for IEEE PELS (2026–2028)