Realizing the potential of 2D transition metal dichalcogenides (TMDs) for next-generation semiconductor technologies will require synthetic films that combine high crystalline quality with wafer-scale uniformity and precise control over electronic and optical properties.

    In this talk, I will present recent work from our group on precursor and reactor engineering to improve material quality while enabling control of composition, doping, and crystal structure.

    First, I will show how controlling precursor chemistry in solid-source CVD enables WSe2 with enhanced uniformity, low charged-defect densities, and high-performance p-type transistors.

    I will then discuss metal-organic CVD approaches for scalable growth of WS2, including substitutional doping, alloying, and selective formation of the ferroelectric 3R polytype with distinct nonlinear optical and valley properties.

    Finally, I will introduce patterned dopant sources that enable programmed lateral carrier-density profiles.

    Together, these results show how advances in synthesis can move 2D semiconductors beyond exfoliated laboratory specimens toward materials whose properties can be engineered during growth for future electronic and optoelectronic devices.

Read more:

High-current p-type transistors from precursor-engineered synthetic monolayer WSe

 

Speaker:

Andy Mannix

Assistant Professor of Materials Science and Engineering at Stanford University.

 AGENDA: