GaN electronics is undergoing a massive market surge globally. Commercial GaN high electron mobility transistors (HEMTs) are bringing newer promises to power electronics; these devices offer a higher switching frequency compared to Si or SiC power devices. In this line, vertical GaN-on-GaN devices are shown to offer even higher switching capability, appended with additional functionalities beyond the reach of currently popular lateral GaN HEMTs. In this talk, Dr. Sarkar will introduce the concepts of emerging GaN-on-GaN vertical power devices and his efforts in understanding crystal growth & device processing. Dr. Sarkar will also introduce “thermal diffusion of metallic Mg into GaN” – a technology developed at Nagoya University and Dr. Sarkar have extensively collaborated in understanding the device level implications.

Biography:

Dr. Biplab Sarkar is an Associate Professor in the Department of ECE, IIT Roorkee. He has received the B.Tech. degree in ECE from the NERIST (India) in 2010; M.Tech in EE from the Indian Institute of Technology Bombay (India) in 2012, and Ph.D. in EE from the NC State University (USA) in 2015. His primary research interests include wide bandgap semiconductor devices. He is a recipient of the JSPS Fellowship in 2021 & 2023. He was recognized as “New Faces in Compound Semiconductors” in Compound Semiconductor Week, University of Michigan, 2022. He has served as visiting faculty in the NC State University (USA), Nagoya University (Japan) and King Abdullah University of Science and Technology (Saudi Arabia). Dr. Sarkar has published more than 60 journal articles.