Workshop: Advanced Nonlinear Modeling and Large-Signal Characterization of III-V RF Devices
Wideband gap III-V technologies are the backbone of modern high-power RF systems, from base stations to advanced radars. However, as modern architectures demand, achieving the required balance of high efficiency, suitable linearity, and wide bandwidth operation requires more than just standard design. It demands reliable nonlinear device models built on precision and accurate measurement data.
Therefore, advanced and accurate nonlinear modeling of RF diodes and transistors is needed to design improved high-performance circuits, modules, and complete systems. Trapping effects, memory effects, nonlinear parasitic components, scaling requirement, and thermal issues must be considered to extract a reliable device model.
Modern measurement systems enable well-controlled and accurate measurements to collect consistent data in short time. These systems allow multiple measurements without large modifications, such as double RF&DC pulsing, non-50 ohm measurements using modulated signals, vector load-pull at sub-THz frequencies, etc. Then, the innovative device models and modeling tools finalize the process to release a model that will be admired by design engineers.
In this workshop, experienced speakers from industry and academia will share their experiences and insights about III-V device characterization and advanced modeling. Fundamentals of large signal measurements, vector calibration for large signal measurements, calibration verification techniques, modern modeling methods, device size scaling issues, and measurement techniques to analyze nonlinear behaviors, such as trapping, will be covered. In addition to large signal topics, noise modeling of III-V devices will be discussed. The workshop will conclude with a networking session, offering a casual atmosphere to discuss challenges and share ideas about the topics.
Chairs:
- Osman Ceylan, PhD (Maury Microwave, USA)
- Seiya Takashima (Sumitomo Electric Device Innovations, Inc., Japan)
Date and Time
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- 2-1 Sekijomachi, Hakata Ward
- Fukuoka, Fukuoka
- Japan 812-0032
- Building: Fukuoka International Congress Center
- Room Number: 411
Speakers
Jia-Shyan Wu
Osman Ceylan of Maury Microwave, USA
Fundamentals of Large Signal Characterization Systems
Elanchezhian Veeramani of Global Foundries, USA
From Calibration to Confidence: Practical Large-Signal III-V Device Characterization for Model-Ready Data
Rana ElKashlan of IMEC, Belgium
Beyond Calibration: DUT-Plane Verification and Device-State Integrity in On-Wafer Load-Pull
Ryoko Kishikawa of AIST & Hiroshima University, Japan
Measurement Uncertainty of Passive Source/Load-Pull
Choon Beng of Formfactor Inc., USA
Probe Tip Calibration, Validation and Measurement Techniques for Sub-THz Wafer Tests
Seyyid M. Dilek of IHP, Germany
Measurement, Characterization, and Modulated Signal Quality Evaluation of Broadband mmWave/THz Circuits
Lida Kouhalvandi of Dogus University, Turkey
Noise Parameter Extraction and Noise Modeling for III-V Devices
Seiya Takashima of Sumitomo Electric Device Innovations, Inc., Japan
Modeling Approach for Large Power GaN Packaged Devices: Idealism and Realism
Seiya Takashima of University of Ferrara, Italy
Compact Modeling of GaN Transistors: Myths, Misconceptions, and Practical Realities
Yutaro Yamaguchi of Mitsubishi Electric Corp., Japan
Large-Signal Modeling Techniques for GaN Power Amplifiers
Koji Yamanaka of Kanazawa Institute of Technology, Japan
