Engineering Emerging Semiconductors for Next-Generation Devices: Programmable Doping, Heterogeneous Integration, and Radiation Resilience

#materials #compound-semiconductor #conductors #high-frequency #device #junctions
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Abstract: Emerging semiconductor materials routinely demonstrate compelling intrinsic properties: wide bandgaps, high breakdown fields, and exceptional high-frequency potential, yet only a small fraction ever becomes ubiquitous technologies. The limiting factor is rarely a single device metric; it is the absence of a scalable, repeatable engineering pathway that turns a material into a reliable platform.
In this invited talk, I will present a holistic framework for accelerating the adoption of emerging compound semiconductors built on three coupled pillars. First, selective and controllable (“programmable”) doping is essential to enable low-resistance contacts, stable junctions, and manufacturable device architectures. Second, integrated thermal design must be treated as a first-order constraint for high-power and harsh-environment operation, and in practice this often requires heterogeneous integration of dissimilar materials to extract heat and eliminate thermal bottlenecks. Third, radiation resilience is increasingly critical for high-power/high-frequency electronics, particularly as these systems move into space and other extreme operating environments where defects and trapping can dominate long-term stability.
Using III-nitride devices as a test vehicle , I will show how this three-pillars approach forms a repeatable methodology that can be stress-tested, refined, and extended as each new compound semiconductor emerges. The central message is simple: a material becomes ubiquitous only when doping control, heat extraction through integration, and radiation robustness are engineered together, early, intentionally, and repeatably.

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  • Starts 10 September 2026 04:00 PM UTC
  • Ends 09 October 2026 05:00 PM UTC
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Dr. Mona Ebrish Mona Ebrish, Ph.D. Assistant Professor, Electrical & Computer Engineering Department, Vanderbilt University

Title: Engineering Emerging Semiconductors for Next-Generation Devices: Programmable Doping, Heterogeneous Integration and Radiation Resilience
Abstract: Emerging semiconductor materials routinely demonstrate compelling intrinsic properties: wide bandgaps, high breakdown fields, and exceptional high-frequency potential, yet only a small fraction ever becomes ubiquitous technologies. The limiting factor is rarely a single device metric; it is the absence of a scalable, repeatable engineering pathway that turns a material into a reliable platform.
In this invited talk, I will present a holistic framework for accelerating the adoption of emerging compound semiconductors built on three coupled pillars. First, selective and controllable (“programmable”) doping is essential to enable low-resistance contacts, stable junctions, and manufacturable device architectures. Second, integrated thermal design must be treated as a first-order constraint for high-power and harsh-environment operation, and in practice this often requires heterogeneous integration of dissimilar materials to extract heat and eliminate thermal bottlenecks. Third, radiation resilience is increasingly critical for high-power/high-frequency electronics, particularly as these systems move into space and other extreme operating environments where defects and trapping can dominate long-term stability.
Using III-nitride devices as a test vehicle , I will show how this three-pillars approach forms a repeatable methodology that can be stress-tested, refined, and extended as each new compound semiconductor emerges. The central message is simple: a material becomes ubiquitous only when doping control, heat extraction through integration, and radiation robustness are engineered together, early, intentionally, and repeatably.

Biography:

Short Biography: Professor Mona Ebrish is a Fulbright Scholar, a member of the Materials Research Society (MRS), and a Senior Member of the Institute of Electrical and Electronics Engineers (IEEE). She received her B.S. in Electrical Engineering from the University of Tripoli (Libya) and her M.S. and Ph.D. in Electrical Engineering from the University of Minnesota. She previously served as an Advisory Research Scientist at IBM, where she worked on semiconductor technologies and non-volatile memory, including Si-CMOS scaling challenges. Her Ph.D. dissertation was among the earliest studies to leverage graphene quantum capacitance for sensing applications. Prior to joining Vanderbilt University, she was a postdoctoral fellow at the U.S. Naval Research Laboratory, investigating wide-bandgap semiconductors for high-voltage applications. Her work has resulted in more than a dozen patents and over 70 papers and conference abstracts in leading journals and conferences.