Current Status and Future Prospects of GaN Power Devices
Current Status and Future Prospects of GaN Power Devices
Significant research into GaN as materials for semiconductor devices has been carried out during the last 20 years. GaN material has wide band gap energy which enables the devices to operate at elevated temperatures (600°C) while retaining low leakage current. The higher breakdown strength for a given blocking voltage of GaN results in small channel lengths as a result, the input and output capacitance and, therefore, the associated switching losses at a given switching frequency, are reduced. This leads to an increase of the switching frequency to 0.5-1 MHz with acceptable switching losses, which significantly reduces the size and cost of the passive components in power electronic systems.
While Si and SiC power MOSFETs are normally-OFF enhancement mode vertical devices, GaN HEMTs are lateral and they can be fabricated to be normally-OFF enhancement mode devices or normally-ON depletion mode devices. A normally-ON device is not preferred for high power applications. Designers overcome this problem by creating enhancement mode devices or by integrating a depletion mode HEMT with a low voltage Si MOSFET, and create cascode or direct drive devices. In this special session, the current status and future prospects of GaN Power HEMTs will be presented. Physics and figure of merits (FoMs) of different power GaN devices that can be found on the market will be presented. Devices from GaN systems (enhancement mode), Transphorm (cascade), VisiC and Texas Instrument (direct drive), Panasonic (GiT), ST (MasterGaN®), and Navitas Semiconductor (AllGaN™) will be compared.
Date and Time
Location
Hosts
Registration
-
Add Event to Calendar
- Ottawa, Ontario
- Canada
- Starts 23 February 2021 02:00 PM UTC
- Ends 17 March 2021 01:00 PM UTC
- No Admission Charge
Speakers
Dr. Tanya Kirilova Gachovska of Solantro Semiconductor Corp. Ottawa, Canada
Current Status and Future Prospects of GaN Power Devices
Biography:
Tanya Kirilova Gachovska received her M.Eng., and Ph.D. degrees, all in Electrical Engineering, from the University of Ruse, Bulgaria, in 1995 and 2003. She earned her second Ph.D. Degree in Electrical Engineering (Power Electronics), at the University of Nebraska-Lincoln (UNL), Lincoln, USA in 2012. Her Ph.D. thesis was “Modeling of Power Semiconductor Devices”. She worked as an Assistant Professor at the University of Ruse from 1999 to 2003. She conducted research from 2004 to 2006 and taught for a semester in 2006 at McGill University in Montréal. She worked as a Postdoctoral Research Scientist in the area of Pulsed Electric Fields at UNL from 2012 to 2013. During her Ph.D. studies at UNL, she taught various courses and labs, and continued a collaboration in Pulsed Electric Fields research with McGill University, University of Ruse, University of Djiali Liabes, Sidi Bel Abbes, Algeria and École Nationale Supérieure Agronomique, El Harrach, Algeria. She joined Solantro Semiconductor, Corp., Ottawa in 2013. Dr. Gachovska authored or coauthored more than 30 technical papers and conference presentations, two books, and two book chapters and holds a world patent in Pulsed Electric Fields. In 2019 Dr. Gachovska become a professional engineer of Ontario. She is the Chairs of IEEE-IAS Power Electronics Devices and Components Committee (PEDCC) and PELS Ottawa. She is PEDCC standard chair and chair for IEEE Standard for “Datasheet Parameters and Tests for Integrated Gate Drivers PEDCC”. Dr. Gachovska is a senior IEEE member.
Email:
Address:Ottawa, Ontario, Canada
IEEE PELS Ottawa Section -- Dr. Tanya Kirilova Gachovska