IEEE Albuquerque SSCS/EDS Joint Chapter: Inaugural Talk

#SSCS #EDS #Gate-All-Around #Analog #Mixed #Design #Device #Physics #Circuit #Semiconductor #Heterogeneous #Integration.
Share

The Road to Gate-All-Around CMOS. 

Hosted by Intel NMDM TLD.


PART I: The Road to Gate-All-Around CMOS (07/17 -- 12:10PM )
Despite the much debated end of Moore's Law, CMOS scaling still maintains economic relevance with 2nm gate-all-around SoCs anticipated in the coming quarters. Area scaling extensively driven by design/technology innovations co-optimized for primarily logic scaling continue to offer compelling node-to-node power, performance, area, and cost benefits. In this tutorial, we will start with a walk through memory lane, recounting a brief history of transistor evolution to motivate the migration from the planar MOSFET to the fully depleted FinFET. We will summarize the key process technology elements that have enabled the finFET CMOS nodes, highlighting the resulting technology characteristics and challenges. This will set the stage for transitioning to the nanoribbon gate-all-around (GAA) transistor architecture and unveiling the magic of how these devices are fabricated.


Part II: The Road to Gate-All-Around and Its Impact on Analog Design (07/17 -- 2:30PM )
Embrace the technology – the essence of how analog design has adapted and thrived throughout decades of increasingly unfriendly CMOS scaling.  This presentation will cover the impact of advanced CMOS on analog design, and examples of the creativity of analog designers to preserve and extend the performance of traditional analog functions. We will finally take a look at technologies on the horizon and suggest how they will impact the future of analog design based on  the challenges that CMOS scaling has
imposed. To address the growing effort required for analog/mixed-signal design, we will cover design strategies on how analog design has adapted and thrived through decades of increasingly unfriendly scaling, including the migration to heterogeneous integration.



  Date and Time

  Location

  Hosts

  Registration



  • Add_To_Calendar_icon Add Event to Calendar

Loading virtual attendance info...

  • 1600 Rio Rancho Blvd SE
  • Rio Rancho, New Mexico
  • United States 87124
  • Building: RR5
  • Room Number: 1NEO

  • Contact Event Hosts
  • Starts 07 July 2026 06:00 AM UTC
  • Ends 17 July 2026 06:00 AM UTC
  • No Admission Charge


  Speakers

Topic:

The Road to Gate-All-Around CMOS

Despite the much debated end of Moore's Law, CMOS scaling still maintains economic relevance with 2nm gate-all-around SoCs anticipated in the coming quarters. Area scaling extensively driven by design/technology innovations co-optimized for primarily logic scaling continue to offer compelling node-to-node power, performance, area, and cost benefits. In this tutorial, we will start with a walk through memory lane, recounting a brief history of transistor evolution to motivate the migration from the planar MOSFET to the fully depleted FinFET. We will summarize the key process technology elements that have enabled the finFET CMOS nodes, highlighting the resulting technology characteristics and challenges. This will set the stage for transitioning to the nanoribbon gate-all-around (GAA) transistor architecture and unveiling the magic of how these devices are fabricated.
Embrace the technology – the essence of how analog design has adapted and thrived throughout decades of increasingly unfriendly CMOS scaling.  This presentation will cover the impact of advanced CMOS on analog design, and examples of the creativity of analog designers to preserve and extend the performance of traditional analog functions. We will finally take a look at technologies on the horizon and suggest how they will impact the future of analog design based on  the challenges that CMOS scaling has imposed. To address the growing effort required for analog/mixed-signal design, we will cover design strategies on how analog design has adapted and thrived through decades of increasingly unfriendly scaling, including the migration to heterogeneous integration.

Biography:

Dr. Alvin Loke is a Senior Principal Engineer at Intel, San Diego, working on analog design/technology co-optimization for Intel’s gate-all-around CMOS. He has previously worked on CMOS nodes spanning 250nm to 2nm at Agilent, AMD, Qualcomm, TSMC, and NXP. Alvin received a BASc from the University of British Columbia, and MS and PhD from Stanford. After several years in CMOS process integration, he has since worked on analog/mixed-signal design focusing on a variety of wireline links including chiplet IOs, design/model/technology interface, and analog design methodologies. Alvin has been an active IEEE Solid-State Circuits Society (SSCS) volunteer since 2003, having served as AdCom Member, CICC Committee Member, Webinar Chair, Denver and San Diego Chapter Chair, as well as JSSC, SSCL, and Solid-State Circuits Magazine Guest Editor. He currently serves as the VLSI Symposium Secretary, SSCS Global Chapters Chair, and again as SSCS Distinguished Lecturer. Alvin frequently speaks on CMOS technology and its impact on analog design, having authored invited publications including the CICC 2018 Best Paper and short courses at ISSCC, VLSI Symposium, CICC, and BCICTS.

Alvin of Intel Corporation

Email:






Agenda

PART I (07/17 -- 12:10PM): 

The Road to Gate-All-Around CMOS ( 12:10-1:30PM )

Q&A ( 1:30-2:00PM )

Break, complimentary snacks/drinks.( 2:00-2:30PM )

 

PART II (07/17 -- 2:30PM): 

The Road to Gate-All-Around CMOS ( 2:30-4.00PM )

Q&A ( 4.00-4.30PM )

Break, complimentary snacks/drinks.( 4.30-5:00PM )



  Media

IEEE_ALvin_Loke_July_17th_2026_02 1.60 MiB